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MT29F32G08CBABAWS
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  • MT29F32G08CBABAWS
ID: 199936
32Gb Asynchronous/Synchronous NAND Flash, TSOP48, Micron, RoHS
Retired
MT29F32G08CBABAWS
32Gb Asynchronous/Synchronous NAND Flash, TSOP48, Micron, RoHS

Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands,address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).

This Micron NAND Flash device additionally includes a synchronous data interface for high-performance I/O operations. When the synchronous interface is active, WE# becomes CLK and RE# becomes W/R#. Data transfers include a bidirectional data strobe (DQS).

Features:

  • Open NAND Flash Interface (ONFI) 2.1-compliant
  • Multiple-level cell (MLC) technology
  • Organizationy:
    • Page size x8: 4320 bytes (4096 + 224 bytes)
    • Block size: 256 pages (1024K + 56K bytes)
    • Plane size: 2 planes x 2048 blocks per plane
    • Device size: 32Gb: 4096 blocks;
  • Clock rate: 12ns (DDR)
  • Read/write throughput per pin: 166 MT/s
  • Read page: 50µs (MAX)
  • Program page: 900µs (TYP)
  • Erase block: 3ms
  • Command set: ONFI NAND Flash Protocol
  • First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 108).
  • RESET (FFh) required as first command after poweron
  • Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface
  • Copyback operations supported within the plane from which data is read
  • Data retention: 10 years
  • Endurance: 5000 PROGRAM/ERASE cycles
  • Operating temperature: 0°C to +70°C
199936

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