MT41K128M16JT-125:K

MT41K512M16HA-125 is an 8Gb DDR3 DRAM that operates at up to 800MHz at a low voltage of 1.35V, ideal for systems requiring high bandwidth and energy efficiency. With a 512Mx16 organization and an operating temperature range of 0°C to 90°C, this memory offers fast data access and reliability in a variety of applications such as servers and industrial computers.

The 64Mb APS6404L-3SQR-SN DRAM is a fast and power-efficient device, ideal for embedded systems, IoT applications and portable devices, operating in SDR mode with QSPI interface and frequency up to 133 MHz. It provides high performance at low power consumption, making it an optimal choice for demanding applications.

AS4C16M16SA-7TCN, Synchronous DRAM (SDRAM) memory 256Mb (16Mx16bit), 54-TSOP II

The ISSI IS42S32800J-6BLI is a low-voltage 256 MB SDRAM, organized as 8 MB x 32 bits, operating at up to 166 MHz. With a compact BGA90 package and an operating temperature range of -40°C to +85°C, it is ideal for applications in embedded systems, industrial and consumer devices.

The EDB4432BBBJ-1D-F-D is a 4-gigabit LPDDR2 SDRAM memory chip from Micron Technology, offering an organization of 128M x 32 bits and a maximum clock frequency of 533 MHz. It operates within a supply voltage range of 1.14 V to 1.95 V and is housed in a 134-pin WFBGA package with dimensions of 10 x 11.5 mm.

SDDR DDR3 2Gb, 1.5V memory