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N-Channel MOSFET Infineon IRFZ44NPBF 55V 49A TO-220
ID: 234442
zł3.90
Tax included
zł3.17 tax excl.
N-channel power MOSFET based on HEXFET technology, designed for high-current switching in power supplies, motor controllers and converters. It supports a drain-source voltage up to 55 V and drain current up to 49 A, while low RDS(on) helps reduce conduction losses. Infineon IRFZ44NPBF
Description
N-channel MOSFET Infineon IRFZ44NPBF is a HEXFET power transistor designed for fast switching and control of high-current loads. Its maximum drain-source voltage is 55 V, while the maximum continuous drain current reaches 49 A under appropriate thermal conditions.
The low channel resistance of up to 17.5 mΩ at VGS = 10 V helps reduce conduction losses. The transistor is designed for through-hole mounting and comes in a TO-220AB package, allowing convenient installation on a heatsink.
Features
- type: N-channel MOSFET
- technology: HEXFET
- drain-source voltage VDS: 55 V
- maximum drain current ID: 49 A
- maximum power dissipation: 83 W
- RDS(on): max. 17.5 mΩ at VGS = 10 V
- gate threshold voltage VGS(th): 2–4 V
- maximum gate-source voltage: ±20 V
- mounting: THT
- package: TO-220AB
- junction temperature range: -55°C to +175°C
234442
Manufacturer
- BTC Korporacja sp. z o. o.
- Ludwinowo Zegrzyńskie 52G
- 05-140 Ludwinowo Zegrzyńskie
- Poland
- [email protected]
- 22 767 36 20
Responsible person
- BTC Korporacja sp. z o. o.
- Ludwinowo Zegrzyńskie 52G
- 05-140 Ludwinowo Zegrzyńskie
- Poland
- [email protected]
- 22 767 36 20
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