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Internal Photoemission Spectroscopy
Free shipping
free shipping in Poland for all orders over 500 PLN
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14 days for return
Each consumer can return the purchased goods within 14 days
IPE spectroscopic applications, several "hot" topics are addressed. Si MOS technology (both high-k gate insulators and low-k dielectrics for interconnect insulation), metal gate materials, development of heterostructures based on high-mobility semiconductors, etc. Thanks for a considerable activity in this field.
- First complete description of the internal photoemission phenomena
- A practical guide to internal photoemission measurements
- Describes reliable energy barrier determination procedures
- Surveys trap spectroscopy. Methods applicable to thin insulating layers
- Provides an overview of the structure of high-permittivity insulating materials and their interfaces
- Contains a complete collection of on-line insignia for wide bandgap insulating materials in contact with metals and semiconductors
List of Abbreviations
List of Symbols
Preface
Chapter 1. Preliminary Remarks and Historical Overview
Chapter 2. Internal versus External Photoemission
Chapter 3. Model Description and Experimental Realization of IPE
Chapter 4. Internal Photoemission Spectroscopy Methods
Chapter 5. Injection Spectroscopy of Thin Layers of Solid: Internal Photoemission as Compared to Other Injection Methods
Chapter 6. Trapped Charge Monitoring and Characterization
Chapter 7. Charge Trapping Kinetics in the Injection-Limited Current Regime
Chapter 8. Transport Effects in Charge Trapping
Chapter 9. Semiconductor-Insulator Interface Barriers
Chapter 10. Electron Energy Barriers Between Conducting and Insulating Materials
Chapter 11. Spectroscopy of Charge Traps in Thin Insulating Layers
Chapter 12. Conclusions
References
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